CHARACTERIZATION OF DIELECTRIC-CHARGING EFFECTS IN RF-MEMS CAPACITIVE SWITCHES
M. LAMHAMDI, J. GUASTAVINO, L. BOUDOU, Y. SEGUI, P. PONS, R. PLANA

Abstract. The influence of different types of dielectric on the switching behaviour and reliability of RF MEMS Capacitive Switches. PECVD LF, MF and HF nitrides layer are compared. For the first time, charging and discharging current as a function of time, for low and high applied electric field and conduction current versus field characteristic is studied, as its relation to the dielectric deposition method and conditions, lead to the conclusion that a conduction mechanism is controlling the conductivity for LF, MF and HF nitrides. The control of the charging/discharging processes is a key factor to allow a fast recovering of the dielectric after charging. From transient measurements it is possible to select the best material for RF-MEMS.