V-BAND MEMS SWITCH ON GAAS SUBSTRATE WITH 0-LEVEL PACKAGING
A. BOÉ, S. SEOK, N. DEPARIS, M. FRYZIEL, C. LOYEZ, N. ROLLAND, P.A. ROLLAND

Abstract. To reduce the consumption, the link budget and the multipath effects in high data rate local area networks, we are developing smart antennas (sectorized antenna). The antennas are addressed through a SP6T (Single Pole 6 Throw) based on MEMS switches on GaAs substrate. This RF MEMS switch exhibits an actuation voltage of 25 V. An isolation of 20 dB and an insertion loss lower than 0.6 dB have been measured at 60 GHz. In addition, two packaging approaches based on low-resistivity silicon or Pyrex substrates with a BCB (Benzo-Cyclo-Butene) intermediate layer are introduced. Finally, a very promising all-BCB packaging solution working from DC to 110 GHz is presented.