Development of a Rotation Sensor Based on the Planar Hall Effect

Thin films of Ni80Fe20 (Permalloy) and structures as Ni80Fe20/NM/Ni80Fe20 were used to build high sensitivity magnetic field sensors. The structures were deposited onto oxidized Si wafers. NM denotes Cu or Al2O3 layers. We developed a method to improve the response of these structures in rotating magnetic fields in order to use the anisotropic magnetoresistance effect for micro compass and contactless potentiometer applications. Also, we developed a simple application for detection of magnetic fields produced by electrical currents. The behaviour of these magnetic sensors was simulated using a micromagnetic simulator. We used the Wheatstone bridge configuration.
Keywords: Thin films; Planar Hall effect; Micromagnetic simulation.