CO-INTEGRATION OF HIGHLY TUNABLE MEMS CAPACITOR AND HIGH QUALITY FACTOR
A. MEHDAOUI, C. FILLIT, D. TSAMADOS, R.Y. FILLIT, C. BILLARD, P. ANCEY,
work reports on the co-integration of highly-tunable MEMS capacitors with
high quality inductors made with a low-temperature process (above-IC
compatible) using polyimide as sacrificial layer, 4µm AlSi as metal layer
for all MEMS devices and highresistivity silicon substrates. 110%
capacitance tuning range and quality factors up to 15 are demonstrated at
2GHz. Basic LC blocks are realized and characterized.
Index Terms: highly tunable MEMS capacitors, high quality factor, above
IC,MEMS devices, LC blocks.