RF-MEMS SWITCHES FOR W-BAND APPLICATIONS
A. STEHLE, V. ZIEGLER, B. SCHÖNLINNER, U. PRECHTEL, H. SEIDEL, U. SCHMID

Abstract. This paper presents RF-MEMS switches for W-Band applications with targeted frequency range from 76-81 GHz. The devices are fabricated on a silicon substrate in a very low complexity process using only one metallization. The switch was simply scaled from the very successful Ka-Band version to W-Band and shows an insertion loss of -0.75 dB and an isolation of -13 dB in the targeted frequency range. Beside the measurement results this paper gives some ideas for improving the non-optimized performance of the device in W-Band.