NOVEL STRUCTURE OF RF MEMS CAPACITIVE SERIES SWITCH FOR AVOIDING POWER
J.D. MARTINEZ, P. BLONDY, A. POTHIER, D. BOUYGE,A. CRUNTEANU, M.
RF power induced stiction remains a definitive limitation in
electrostatically-actuated MEMS switches working in hot switching
conditions for power levels > 500 mW. The authors present in this paper a
novel structure of capacitive series switch intended to reduce the
electrostatic force induced by the incoming RF power. The switch is
fabricated on a high-resistivity Si substrate using both surface and bulk
micromachining techniques. It can be properly designed for operation
between 2-8 GHz. The fabricated switch has insertion losses <0.4 dB and
isolation >10 dB at the design frequency. Power handling measurement tests
have shown that the switch can handle up to 5 W at 10 GHz over a minimum
of 10.5 million cycles.