EPITAXIAL ALN THIN FILMS FOR RF APPLICATIONS
J.C. MORENO, F. SEMOND, E. FRAYSSINET, J. MASSIES, R. VELARD, X.
In this paper, we propose to use epitaxial aluminium nitride (AlN) thin
films grown by molecular beam epitaxy (MBE) to make advanced high
frequencies bulk acoustic wave (BAW) devices for filtering and time
reference (oscillators) applications. We studied the material properties
by performing both surface and structural characterizations.