DIELECTRIC MATERIAL CHARGING AND ESD STRESS OF ALN-BASED CAPACITIVE RF
J. RUAN, N. NOLHIER, M. BAFLEUR, L. BARY,N. MAURAN, F. COCCETTI, T.
LISEC, R. PLANA
Dielectric characterization of AlN based microwave capacitive switches has
been performed. A figure-of-merit (FOM) has been drawn up to show an
overview of dielectric material charging in capacitive RF MEMS with
respect to its ability to trap charges under an electrical stress.
Electrostatic Discharge (ESD) experiments have been carried out using a
Transmission Line Pulse (TLP) technique. Electric tests show a drift of
the threshold pull-down and pull-up voltages, associated to a dielectric
charging process. ESD stresses create some electric arcs in both
configurations membrane’s up-state and down-state and the related
degradation is impacting the dielectric properties and then the microwave