ANALYSIS OF DIELECTRIC CHARGING FOR MEMS CAPACITIVE SWITCHES RELIABILITY
M. LAMHAMDI, A. BELARNI, P. PONS, L. BOUDOU, J. GUASTAVINO, Y.
SEGUI, M. DILHAN, R. PLANA
In this paper, we present a simplified method to evaluate the dielectric
charging using only simple dielectric layers onto full wafer. This method
is based on charge imaging by atomic force microscopy (AFM). The
experimental images obtained can then be compared versus time in order to
evaluate the dielectric ability to evacuate the charges. This method is
also close to the real configuration of the switch in the down position
with local contacts. This study is coupled to the MIM capacitor
measurements, in order to evaluate the total amount and surface
distribution of trapped charges.